STGx18N40LZ دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STGx18N40LZ
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حجم فایل
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909.306
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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25
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مشخصات فنی
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
STMicroelectronics STGB18N40LZT4
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
30A
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Power Dissipation (Pd):
150W
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Turn?on Delay Time (Td(on)):
650ns
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
-
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Total Gate Charge (Qg@Ic,Vge):
29nC
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Turn?off Delay Time (Td(off)):
13.5us
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Pulsed Collector Current (Icm):
40A
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Collector-Emitter Breakdown Voltage (Vces):
420V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
1.7V@4.5V,10A
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Package:
TO-263
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Manufacturer:
STMicroelectronics
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Series:
Automotive, AEC-Q101, PowerMESH™
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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IGBT Type:
-
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Voltage - Collector Emitter Breakdown (Max):
420V
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Current - Collector (Ic) (Max):
30A
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Current - Collector Pulsed (Icm):
40A
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Vce(on) (Max) @ Vge, Ic:
1.7V @ 4.5V, 10A
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Power - Max:
150W
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Switching Energy:
-
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Input Type:
Logic
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Gate Charge:
29nC
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Td (on/off) @ 25°C:
650ns/13.5µs
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Test Condition:
300V, 10A, 5V
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Mounting Type:
Surface Mount
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Supplier Device Package:
D2PAK
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Base Part Number:
STGB18
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detail:
IGBT 420V 30A 150W Surface Mount D2PAK
